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Silicon Photonics
High-speed silicon photonic electro-optic Kerr modulation
Jonathan Peltier
1,2,4,*
Weiwei Zhang
3,5,*
Leopold Virot
2
Christian Lafforgue
1
[ ... ]
Laurent Vivien
1
Author Affiliations
Abstract
1
University Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology (C2N), Palaiseau 91120, France
2
University Grenoble Alpes, CEA, LETI, Grenoble 38000, France
3
Optoelectronics Research Centre, Zepler Institute for Photonics and Nanoelectronics, Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, UK
4
e-mail: jonathan.peltier@c2n.upsaclay.fr
5
e-mail: Weiwei.Zhang@soton.ac.uk
Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations. Beyond the plasma dispersion modulation, an alternative solution in silicon is to exploit the DC Kerr effect, which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field. Although some theoretical and experimental studies have shown its existence in silicon, limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far. This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides. The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations, and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides. High-speed optical modulation response is analyzed, and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c. voltage of 30 V. This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation.
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Photonics Research
2024, 12(1): 51
Research Articles
Supercontinuum generation in silicon photonics platforms
Christian Lafforgue
1,2,*
Miguel Montesinos-Ballester
1
Thi-Thuy-Duong Dinh
1
Xavier Le Roux
1
[ ... ]
Laurent Vivien
1,3,*
Author Affiliations
Abstract
1
Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 91120 Palaiseau, France
2
e-mail: lafforgue43@gmail.com
3
e-mail: laurent.vivien@c2n.upsaclay.fr
Nonlinear optics has not stopped evolving, offering opportunities to develop novel functionalities in photonics. Supercontinuum generation, a nonlinear optical phenomenon responsible for extreme spectral broadening, attracts the interest of researchers due to its high potential in many applications, including sensing, imaging, or optical communications. In particular, with the emergence of silicon photonics, integrated supercontinuum sources in silicon platforms have seen tremendous progress during the past decades. This article aims at giving an overview of supercontinuum generation in three main silicon-compatible photonics platforms, namely, silicon, silicon germanium, and silicon nitride, as well as the essential theoretical elements to understand this fascinating phenomenon.
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Photonics Research
2022, 10(3): 03000A43
Silicon Photonics
Silicon photonics phase and intensity modulators for flat frequency comb generation
Download:589次
Lucas Deniel
1,*
Erwan Weckenmann
2
Diego Pérez Galacho
1,4
Christian Lafforgue
1
[ ... ]
Delphine Marris-Morini
1
Author Affiliations
Abstract
1
Univ. Paris-Saclay, CNRS, Centre for Nanosciences and Nanotechnologies, 91120 Palaiseau, France
2
Univ. Rennes, CNRS, FOTON-UMR 6082, F-22305 Lannion, France
3
ST Microelectronics, 850 rue Jean Monnet, 38920 Crolles, France
4
Current address: ITEAM Research Institute, Universitat Politècnica de València, Spain
Flat electro-optical frequency combs play an important role in a wide range of applications, such as metrology, spectroscopy, or microwave photonics. As a key technology for the integration of optical circuits, silicon photonics could benefit from on-chip, tunable, flat frequency comb generators. In this article, two different architectures based on silicon modulators are studied for this purpose. They rely on a time to frequency conversion principle to shape the comb envelope. Using a numerical model of the silicon traveling-wave phase modulators, their driving schemes are optimized before their performances are simulated and compared. A total of nine lines could be obtained within a 2 dB flatness, with a line-spacing ranging from 0.1 to 7 GHz. Since this tunability is a major asset of electro-optical frequency combs, the effect of segmenting the phase modulators is finally investigated, showing that the flat lines spacing could be extended up to 39 GHz by this method.
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Photonics Research
2021, 9(10): 10002068
Silicon Photonics
Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform
Download:775次
Christian Lafforgue
1,*†
Sylvain Guerber
1,2†
Joan Manel Ramirez
3
Guillaume Marcaud
1
[ ... ]
Laurent Vivien
1
Author Affiliations
Abstract
1
Centre for Nanoscience and Nanotechnology (C2N), CNRS, Université Paris-Sud, Université Paris-Saclay, UMR 9001, 91405 Orsay Cedex, France
2
Technologie R&D, STMicroelectronics, SAS, 850 rue Jean Monnet, 38920 Crolles, France
3
III-V lab, a joint venture from Nokia Bell Labs, Thales and CEA, 1 Avenue Augustin Fresnel, 91767 Palaiseau Cedex, France
We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.
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Photonics Research
2020, 8(3): 03000352
Silicon Photonics
25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures
Daniel Benedikovic
1,*
Léopold Virot
2
Guy Aubin
1
Farah Amar
1
[ ... ]
Laurent Vivien
1
Author Affiliations
Abstract
1
Centre de Nanosciences et de Nanotechnologies, CNRS, University of Paris-Sud, Université Paris-Saclay, C2N–Palaiseau, 91120 Palaiseau, France
2
University Grenoble Alpes and CEA, LETI, Minatec Campus, F-38054 Grenoble, Grenoble Cedex, France
3
Technology R&D, STMicroelectronics SAS, 850 rue Jean Monnet–38920 Crolles, France
Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the high-data-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon (Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of ~9 GHz at ?1 V and ~30 GHz at ?3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10?9 is achieved for conventional 10 Gbps, 20 Gbps, and 25 Gbps data rates, yielding optical power sensitivities of ?13.85 dBm, ?12.70 dBm, and ?11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.
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Photonics Research
2019, 7(4): 04000437
Integrated Optics Devices
Mode selection and dispersion engineering in Bragg-like slot photonic crystal waveguides for hybrid light–matter interactions
Download:689次
Samuel Serna
Weiwei Zhang
Thi Hong Cam Hoang
Carlos Alonso-Ramos
[ ... ]
Eric Cassan
*
Author Affiliations
Abstract
Centre de Nanosciences et de Nanotechnologies, UMR 9001 (CNRS/Université Paris-Sud), Université Paris-Saclay, 91405 Orsay, France
We introduce a family of slot photonic crystal waveguides (SPhCWs) for the hybrid integration of low-index active materials in silicon photonics with energy-confinement factors of
~
30
%
in low-index regions. The proposed approach, which is based on a periodic indentation of the etched slot in the middle of the SPhCW, makes it possible to reconcile a simultaneously narrow and wide slot for exploiting the two modes of even symmetry of a SPhCW. The resulting mode-selection mechanism allows a flexible choice of the modes to be used. Furthermore, the proposed structure offers tremendous flexibility for adjusting the dispersive properties of the slot-confined modes, in particular of their slow-light effects. Flat band slow light in a bandwidth of about 60 nm with a group velocity dispersion factor
|
β
2
|
below
1
ps
2
/
mm
is numerically demonstrated by this approach, corresponding to a normalized delay bandwidth product of around 0.4. These results, obtained from hollow-core periodic waveguides that are directly designed in view of hybrid integration of active materials in mechanically robust structures (not based on free-standing membranes) could pave the way for the realization of on-chip slow-light bio-sensing, active hybrid-silicon optoelectronic devices, or all-optical hybrid-silicon nonlinear functionalities.
Photonic crystal waveguides
Photonic crystals
Optical devices
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Photonics Research
2018, 6(1): 01000054
Integrated Optics
High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]
Download:1914次
Leopold Virot
1,2,3,4
Laurent Vivien
1
Jean-Marc Fedeli
2
Yann Bogumilowicz
2
[ ... ]
Eric Cassan
1
Author Affiliations
Abstract
1
Institut d’Electronique Fondamentale (IEF), Univ. Paris-Sud, CNRS, Bat 220, F-91405 Orsay, France
2
CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble, France
3
leopold.virot@cea.fr
4
laurent.vivien@u-psud.fr
5
STMicroelectronics, Silicon Technology Development, Crolles, France
This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications. 200 mm wafers and production tools were used to fabricate the devices. Yields over 97% were obtained for three different compact photodiodes (10 × 10 μm and intrinsic region width of 0.5, 0.7, and 1 μm) within the same batch of three wafers. Those photodiodes exhibit low dark currents under reverse bias with median values of 74, 62, and 61 nA for intrinsic widths of 0.5, 0.7, and 1 μm, respectively, over a full wafer. Responsivities up to 0.78 A∕W at 1550 nm and zero bias were measured. Zero bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to -13.9 and -12.3 dBm, respectively.
Photodetectors
Optoelectronics
Integrated optics devices
Photodiodes
Photodetectors
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Photonics Research
2013, 1(3): 03000140
Silicon slow light photonic crystals structures: present achievements and future trends
Eric CASSAN
*
Xavier LE ROUX
Charles CAER
Ran HAO
[ ... ]
Laurent VIVIEN
作者单位
摘要
Institut d'Electronique Fondamentale, Universite Paris-Sud, CNRS UMR 8622, Bat. 220, 91405 Orsay Cedex, France
slow light
photonic crystals
silicon photonics
integrated optical devices
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Frontiers of Optoelectronics
2011, 4(3): 243
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